Antonio G. M. Strollo, Ettore Napoli
abstract
The paper presents an improved version of a recently proposed PiN diode circuit model.
The most appealing feature of the developed model is the easy parameter extraction procedure, that does not require an in-depth knowledge of device manufacturing neither particularly complex measurements of device characteristics.
The parameter extraction procedure developed in the paper is carried-out in an automatic fashion, with the help of a new stochastic global optimization algorithm.
A comprehensive set of experimental results shows the effectiveness of PiN diode model and of parameter extraction technique.